SOI平台上首款硅波导集成InGaAs/InAlAs雪崩光电二极管

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830481

Jishen Zhang, Haiwen Xu, K. Tan, S. Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, C. Lim, S. Yoon, Xiao Gong

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引用次数: 1

摘要

首次在SOI平台上实现了一种新型Si波导集成InGaAs/InAlAs雪崩光电二极管(APD)，其中沿Si波导传播的光被其上的InGaAs层瞬时吸收。该集成apd在1570 nm处具有0.99 a /W的高响应度，在90%击穿电压(Vbr)下的暗电流(Idark)为7.6 nA，最大增益大于70。在证实了键合过程中引起的变化可以忽略不计的情况下，实现了键合III-V外延层的良好质量和所制备的波导集成apd的良好性能。

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First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

For the first time, a novel Si-waveguide-integrated InGaAs/InAlAs avalanche photodiode (APD) on the SOI platform was realized, in which light propagating along the Si waveguide is evanescently absorbed by an overlaying InGaAs layer bonded on it. The integrated-APD exhibits a high responsivity of 0.99 A/W at 1570 nm, a dark current (Idark) of 7.6 nA at 90% breakdown voltage (Vbr), and a maximum gain of larger than 70. The good quality of the bonded III-V epi-layers and promising performance of the fabricated waveguide-integrated APDs has been realized where the negligible variation induced by the bonding process has been confirmed.

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来源期刊

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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