用于x波段SiGe低噪声放大器的有机晶圆级封装

2009 European Microwave Conference (EuMC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5295965

C. Patterson, T. Thrivikraman, S. Bhattacharya, C. Poh, J. Cressler, J. Papapolymerou

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引用次数: 13

摘要

本文首次提出了一种基于有机液晶聚合物(LCP)的系统级封装模块，用于x波段SiGe低噪声放大器。LNA与2 mil LCP层压，并通过互连制造。在封装之前和之后进行测量，以确保放大器性能的准确比较。在封装之前，LNA的增益为10.3 dB，最小噪声系数为1.8 dB, 50 Ω噪声系数为1.9dB。封装后，增益输出损失0.1 dB，最小噪声系数增加0.1 dB, 50 Ω噪声系数增加0.6 dB。结果表明，薄层LCP可成功应用于SiGe射频电子器件和有机封装层的晶圆级封装方案中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Organic wafer-scale packaging for X-band SiGe low noise amplifier

This paper presents for the first time an organic Liquid Crystal Polymer (LCP) based System-on-Package module for an X-band SiGe low noise amplifier. The LNA is laminated with 2 mil LCP and via interconnects are fabricated. Measurements are made before and after packaging to ensure accurate comparison of amplifier performance. Before packaging, the LNA yielded 10.3 dB of gain, a minimum noise figure of 1.8 dB and a 50 Ω noise figure of 1.9dB. After packaging, there was a 0.1 dB of loss in gain output, a 0.1 dB increase in minimum noise figure and a 0.6 dB increase in 50 Ω noise figure. It is shown that thin layers of LCP can be successfully used in a wafer level packaging scheme for hybrid integration of SiGe RF electronics and organic packaging layers.

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2009 European Microwave Conference (EuMC)

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