一种采用AlGaN/GaN hfet的高功率Tx/Rx开关IC

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269350

H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, D. Ueda

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引用次数: 21

摘要

首次开发了一种基于AlGaN/GaN hfet的超高功率Tx/Rx开关IC。通过Si掺杂技术实现的低导通电阻和采用Al/sub 2/O/sub 3/衬底实现的低关断电容，使其具有0.26 dB的插入损耗和27 dB的隔离性能，在1 GHz时的功率处理能力为43 W。

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A high power Tx/Rx switch IC using AlGaN/GaN HFETs

An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.

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IEEE International Electron Devices Meeting 2003

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