Boris V. Mikhitaryan, O. Y. Manashirov, S. B. Mikhrin
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引用次数: 0
摘要
众所周知,一些热处理可以显著提高Gd2O2S:Tb, Y202S:Tb荧光粉的光产率,但在激发下的能量传递过程还需要进一步研究。介绍了硫化氧荧光粉的合成和热处理工艺优化的新成果。热处理在不同的环境气氛下进行,温度范围为200-1000℃。为了测量热处理中缺陷形成/退火的动力学性质,我们测量了相对缺陷浓度与等温退火持续时间的关系。采用不同的激发方法对热处理前后荧光粉的体缺陷和表面缺陷进行了研究:直接Tb3+中心激发(4.9 eV UV激发)、以上间隙激发(x射线;1 kV和10 kV电子,8.4 eV VUV激发),热激发发光测量。调查结果使我们能够提高荧光粉的产光率(与商业样品相比增加20%)。
It's well known, that some heat treatments improve significantly the light yield of Gd2O2S:Tb, Y202S:Tb phosphors, but processes ofthe energy transfer at excitations need further investigations. We present the new results ofthe synthesis and heat treatments optimization of oxysulfide phosphors. The heat treatments curried out at different ambient atmospheres in temperature range 200-1000°C. To measure kinetic properties of defects formations/annealing at heat treatments we measured the dependencies ofrelative defect concentrations on the duration of isothermal annealing. The investigation of bulk and surface defects in phosphors before and after heat treatments carried out at different excitation with different methods: spectra measurements with direct Tb3+ center excitation (4.9 eV UV excitation), spectra measurements with above gap excitation (X-ray; 1 kV and 10 kV electrons, 8.4 eV VUV excitation), thermo-stimulated luminescence measurements. The results of investigations allow us to increase the light yield of phosphors (20% increase in comparison with commercial samples).