8-12GHz压控振荡器与SiGe异质结双极晶体管

1994 24th European Microwave Conference Pub Date : 1994-10-01 DOI:10.1109/EUMA.1994.337284

A. Gruhle, H. Kibbel, R. Speck

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引用次数: 3

摘要

采用共发射体结构的SiGe异质结双极晶体管(HBT)构建了8-12 GHz混合型压控振荡器。为了实现较宽的频率范围，只使用了集总单元。晶体管和变容管是在相同的高电阻衬底上使用相同的mbe生长层制造的。所选择的掺杂分布导致输出频率与变容管电压呈线性关系。

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8-12GHz VCO with SiGe Heterojunction Bipolar Transistor

A hybrid 8-12 GHz VCO has been built using a SiGe heterojunction bipolar transistor (HBT) in common-emitter-configuration. In order to achieve the wide frequency range only lumped elements were used. Transistors and varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The chosen doping profile resulted in a linear dependence of the output frequency on the varactor voltage.

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来源期刊

1994 24th European Microwave Conference

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