用于40gb /s光传输系统的HBT前置放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567869

Y. Suzuki, H. Shimawaki, Y. Amamiya, K. Fukuchi, N. Nagano, H. Yano, K. Honjo

{"title":"用于40gb /s光传输系统的HBT前置放大器","authors":"Y. Suzuki, H. Shimawaki, Y. Amamiya, K. Fukuchi, N. Nagano, H. Yano, K. Honjo","doi":"10.1109/GAAS.1996.567869","DOIUrl":null,"url":null,"abstract":"A preamplifier for 40-Gb/s optical transmission systems has been constructed using AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6 GHz and a transimpedance gain of 41.6 dB/spl Omega/. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40 Gb/s optical receiver. The results indicate that AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers are very promising for the implementation of 40 Gb/s optical transmission systems.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"58 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"An HBT preamplifier for 40-Gb/s optical transmission systems\",\"authors\":\"Y. Suzuki, H. Shimawaki, Y. Amamiya, K. Fukuchi, N. Nagano, H. Yano, K. Honjo\",\"doi\":\"10.1109/GAAS.1996.567869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A preamplifier for 40-Gb/s optical transmission systems has been constructed using AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6 GHz and a transimpedance gain of 41.6 dB/spl Omega/. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40 Gb/s optical receiver. The results indicate that AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers are very promising for the implementation of 40 Gb/s optical transmission systems.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"58 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

采用具有p/sup +/再生外源基层的AlGaAs-InGaAs HBTs，构建了用于40gb /s光传输系统的前置放大器。该前置放大器的带宽为34.6 GHz，透阻增益为41.6 dB/spl ω /。这是迄今为止报道的前置放大器中最宽的带宽。这些特性适用于40gb /s光接收机。结果表明，具有p/sup +/再生外源基层的AlGaAs-InGaAs HBTs在实现40gb /s光传输系统中是非常有前途的。

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An HBT preamplifier for 40-Gb/s optical transmission systems

A preamplifier for 40-Gb/s optical transmission systems has been constructed using AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6 GHz and a transimpedance gain of 41.6 dB/spl Omega/. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40 Gb/s optical receiver. The results indicate that AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers are very promising for the implementation of 40 Gb/s optical transmission systems.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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