{"title":"具有增强动态范围的1V CMOS有源像素传感器","authors":"R. Weng, C.L. Yen, Chun-Yu Liu","doi":"10.1109/APCCAS.2008.4746047","DOIUrl":null,"url":null,"abstract":"A low voltage wide dynamic range CMOS active pixel sensor (APS) using 0.18 mum standard CMOS process is presented. The dynamic range of the proposed APS is 42 dB and it is twelve times more than a conventional CMOS APS architecture. The power consumption of the APS is 86 nW at 1 V supply. The fill factor is about 40% with 11 mum times 11 mum pixel size.","PeriodicalId":344917,"journal":{"name":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1V CMOS active pixel sensor with enhanced dynamic range\",\"authors\":\"R. Weng, C.L. Yen, Chun-Yu Liu\",\"doi\":\"10.1109/APCCAS.2008.4746047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low voltage wide dynamic range CMOS active pixel sensor (APS) using 0.18 mum standard CMOS process is presented. The dynamic range of the proposed APS is 42 dB and it is twelve times more than a conventional CMOS APS architecture. The power consumption of the APS is 86 nW at 1 V supply. The fill factor is about 40% with 11 mum times 11 mum pixel size.\",\"PeriodicalId\":344917,\"journal\":{\"name\":\"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2008.4746047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2008.4746047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1V CMOS active pixel sensor with enhanced dynamic range
A low voltage wide dynamic range CMOS active pixel sensor (APS) using 0.18 mum standard CMOS process is presented. The dynamic range of the proposed APS is 42 dB and it is twelve times more than a conventional CMOS APS architecture. The power consumption of the APS is 86 nW at 1 V supply. The fill factor is about 40% with 11 mum times 11 mum pixel size.
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