缓冲泄漏对650V AlGaN/GaN hemt固有可靠性的影响

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409831

P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack

{"title":"缓冲泄漏对650V AlGaN/GaN hemt固有可靠性的影响","authors":"P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack","doi":"10.1109/IEDM.2015.7409831","DOIUrl":null,"url":null,"abstract":"The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":"{\"title\":\"Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs\",\"authors\":\"P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack\",\"doi\":\"10.1109/IEDM.2015.7409831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"73\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409831\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 73

摘要

研究了缓冲陷阱(通过电流dlt识别为CN受体)在650V额定GaN-on-Si功率器件的失态泄漏和动态损耗中的作用。由于CN陷阱的动态特性和空间电荷限制电流分量之间的相互作用，动态Ron具有很强的电压依赖性。这导致在420V和850V之间的HTRB条件下完全抑制dyn Ron降解。

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Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

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2015 IEEE International Electron Devices Meeting (IEDM)

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