单轴机械应力作用下硅功率MOS栅氧化电流的电学特性

2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES) Pub Date : 2020-09-01 DOI:10.1109/IESES45645.2020.9210683

L. M. Selgi, A. Sciuto, M. Calabretta, A. Sitta, G. D'Arrigo

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引用次数: 0

摘要

本文介绍了硅低压沟槽栅电荷耦合功率MOSFET在单轴外机械应力作用下的电学特性。在对氧化物泄漏电流进行电气测量时，应力是由三点弯曲系统施加的。

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Electrical characterization of gate oxide current in a silicon power MOS subjected to uniaxial mechanical stress

This paper presents the results of the electrical characterization of a silicon Low Voltage Trench Gate charged-coupled Power MOSFET under external uniaxial mechanical stress. The stress was imposed by a 3 Point Bending system during electrical measurement of the oxide leakage current.

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2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)

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