外延Si:P阻塞杂质带探测器的噪声行为研究

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7547012

B. Wang, Xiaodong Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, Yawei Kuang, M. Pan

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引用次数: 0

摘要

用实验和理论方法研究了外延型Si:P BIB探测器的噪声行为。详细介绍了该装置的结构和测试系统。分析了噪声谱密度与器件温度的关系。结果表明，器件温度对热噪声和射弹噪声都有很强的依赖性。

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Study on noise behaviors of epitaxial Si:P blocked-impurity-band detectors

The noise behaviors of the epitaxial Si:P BIB detectors have been investigated by experimental and theoretical tools. The device structure and testing system are presented in detail. The relationship between the noise spectral density and device temperature is analyzed. It is demonstrated that not only thermal noise but also shot noise are strongly dependent on the device temperature.

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2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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