溅射二氧化硅薄膜的氮化

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496392

E. Jelenkovic, K. Tong

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引用次数: 0

摘要

结果表明，通过反应溅射对溅射氧化物进行氮化处理，使氧化硅界面硬化，减少了应力后界面态的生成。SIMS分析证实了在氧化物/硅界面附近存在SiN峰。讨论了一种SiO/sub 2//SiO/sub x/N/sub y/结构的电荷俘获、漏电流和中隙电压漂移。

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Nitridation of sputtered silicon dioxide films

It is shown that nitridation of sputtered oxide by reactive sputtering can give a hardened oxide-silicon interface with reduced interface states generation after stress. SIMS analysis has confirmed the existence of SiN peak close to the oxide/silicon interface. A stacked SiO/sub 2//SiO/sub x/N/sub y/ structure is discussed relative to charge trapping, leakage current and mid-gap voltage shift.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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