四电平单元NAND设计中带偏移的程序和读取方法

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126461

L. Shijun, Zou Xuecheng, Wang Baocun

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引用次数: 0

摘要

3D QLC (qud -Level- cell) NAND技术每个单元具有16个电压电平，将成为继3D TLC (Triple Level cell) NAND闪存成功之后的下一代存储技术之一。此外，本文还对16个电压电平的程序算法进行了研究，针对QLC器件由于功率损耗、程序分布等原因容易产生数据误差的问题，对重要的读取算法进行了研究。针对低密度奇偶校验(LDPC)信念传播(BP)软判决译码，提出了带偏移和软消息生成的读取方法。

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Program and read methods with offset in quad-level-cell NAND design

3D QLC (Quad-Level-Cell) NAND technology with 16 voltage levels per cell will be one of the next generation memory technologies after 3D TLC (Triple Level Cell) NAND flash succeeded. Besides, program algorithm for 16 voltage levels is studied in this paper, the important read algorithms are investigated because the data errors of QLC device will be easily generated due to power loss, program distribute, etc. The read method with offset and soft message generation for Low Density Parity Check (LDPC) Belief Propagation (BP) soft-decision decoding are presented.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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