硅mos晶体管控制栅结构与工作可靠性的关系

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676507

O. Kulinich, V. Smyntyna, I. Yatsunskiy, M. Glauberman, G. Chemeresyuk

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引用次数: 0

摘要

研究了硅场MOS器件与栅区杂质活化有关的失效机理。结果表明，失效不仅由二氧化硅中的金属间相引起，而且由于金属原子在二氧化硅中的电迁移和活化而导致MOS器件栅区烧坏。

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The connection between structure of control gate and operation reliability of silicon MOS-transistor

Mechanisms of failure processes with silicon field MOS devices connected with activation of impurity in the gate area were studied. It is shown that failures arise not only by intermetallic phase in dioxide silicon but also at burning out of the gate areas of MOS devices occurring owing to electromigration and activation of atoms of metal in dioxide volume.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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