G. Ng, Y. Chan, D. Pavlidis, Y. Kwon, T. Brock, J. Kuo
{"title":"一种以Al/sub 0.52/In/sub 0.48/P为势垒层的新型准晶In/sub 0.2/Ga/sub 0.8/As层HEMT","authors":"G. Ng, Y. Chan, D. Pavlidis, Y. Kwon, T. Brock, J. Kuo","doi":"10.1109/ICIPRM.1993.380573","DOIUrl":null,"url":null,"abstract":"A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger /spl Delta/E/sub c/ than pseudomorphic Al/sub 0.22/Ga/sub 0.78/As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al/sub 0.52/In/sub 0.48/P HEMTs are presented.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer\",\"authors\":\"G. Ng, Y. Chan, D. Pavlidis, Y. Kwon, T. Brock, J. Kuo\",\"doi\":\"10.1109/ICIPRM.1993.380573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger /spl Delta/E/sub c/ than pseudomorphic Al/sub 0.22/Ga/sub 0.78/As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al/sub 0.52/In/sub 0.48/P HEMTs are presented.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer
A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger /spl Delta/E/sub c/ than pseudomorphic Al/sub 0.22/Ga/sub 0.78/As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al/sub 0.52/In/sub 0.48/P HEMTs are presented.<>
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