{"title":"多极和超表面量子阱发射器","authors":"J. Schuller","doi":"10.1109/RAPID.2019.8864378","DOIUrl":null,"url":null,"abstract":"Semiconductor quantum wells underpin a great number of modern optoelectronics technologies. Here, we demonstrate directional photoluminescence arising from: 1) magnetic dipole transitions in layered two-dimensional hybrid organic-inorganic perovskite quantum wells and 2) phased array GaN quantum well metasurfaces.","PeriodicalId":143675,"journal":{"name":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multipole and Metasurface Quantum Well Emitters\",\"authors\":\"J. Schuller\",\"doi\":\"10.1109/RAPID.2019.8864378\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor quantum wells underpin a great number of modern optoelectronics technologies. Here, we demonstrate directional photoluminescence arising from: 1) magnetic dipole transitions in layered two-dimensional hybrid organic-inorganic perovskite quantum wells and 2) phased array GaN quantum well metasurfaces.\",\"PeriodicalId\":143675,\"journal\":{\"name\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RAPID.2019.8864378\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAPID.2019.8864378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semiconductor quantum wells underpin a great number of modern optoelectronics technologies. Here, we demonstrate directional photoluminescence arising from: 1) magnetic dipole transitions in layered two-dimensional hybrid organic-inorganic perovskite quantum wells and 2) phased array GaN quantum well metasurfaces.
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