{"title":"29 GHz时GaInP/GaAs HBT的噪声特性","authors":"B. Lemna, A. Freundorfer","doi":"10.1109/ANTEM.1998.7861733","DOIUrl":null,"url":null,"abstract":"A characterization of bias and emitter periphery-to-area ratio (Pe/Ae) of GaInP/GaAs HBT at 29 GHz is presented. The measured data of fmax, ft, Fmin, associated gain (Ga) and noise measure (NM) for four transistors were obtained. It is shown that the larger periphery-to-area ratio of the emitter, Pe/Ae, the lower the Fmin with a minimum. The best transistor, an array of twenty 2×2 μm2, had Fmin=2.81 dB, Ga = 4.9dB and NM=1.35.","PeriodicalId":334204,"journal":{"name":"1998 Symposium on Antenna Technology and Applied Electromagnetics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Noise characteristics of GaInP/GaAs HBT at 29 GHz\",\"authors\":\"B. Lemna, A. Freundorfer\",\"doi\":\"10.1109/ANTEM.1998.7861733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A characterization of bias and emitter periphery-to-area ratio (Pe/Ae) of GaInP/GaAs HBT at 29 GHz is presented. The measured data of fmax, ft, Fmin, associated gain (Ga) and noise measure (NM) for four transistors were obtained. It is shown that the larger periphery-to-area ratio of the emitter, Pe/Ae, the lower the Fmin with a minimum. The best transistor, an array of twenty 2×2 μm2, had Fmin=2.81 dB, Ga = 4.9dB and NM=1.35.\",\"PeriodicalId\":334204,\"journal\":{\"name\":\"1998 Symposium on Antenna Technology and Applied Electromagnetics\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Symposium on Antenna Technology and Applied Electromagnetics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ANTEM.1998.7861733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Symposium on Antenna Technology and Applied Electromagnetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.1998.7861733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A characterization of bias and emitter periphery-to-area ratio (Pe/Ae) of GaInP/GaAs HBT at 29 GHz is presented. The measured data of fmax, ft, Fmin, associated gain (Ga) and noise measure (NM) for four transistors were obtained. It is shown that the larger periphery-to-area ratio of the emitter, Pe/Ae, the lower the Fmin with a minimum. The best transistor, an array of twenty 2×2 μm2, had Fmin=2.81 dB, Ga = 4.9dB and NM=1.35.
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