双栅隧道场效应晶体管ON电流改进技术

Satyam Kumar, G. Khanna
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引用次数: 3

摘要

本设计描述了栅极绝缘子介电介质、栅极绝缘子厚度和硅体厚度等参数对DG-TFET漏极电流的影响。使用优化的器件参数存档改进的导通电流,已存档的导通电流高达0.18 mA,关断电流为10−19 A,并且已观察到低至16 mV/dec的瞬时亚阈值斜率,这是TFET可以取代MOSFET的原因之一。利用Synopsys TCAD工具对非局部势垒隧道模型进行了仿真。对于50 nm通道长度的DG-TFET,获得了大于1014的巨大离子/ off比。因此,隧道场效应管是低待机低功耗开关性能的理想选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ON current improvement techniques for double gate-tunnel field effect transistor
The present design describes the behavior of drain current of DG-TFET with different parameter like gate insulator dielectric, its thickness and silicon body thickness. An improved ON current is archived using optimized device parameter, ON current as high as 0.18 mA and off current of the order of 10−19 A have been archived and a instantaneous sub threshold slope of as low as 16 mV/dec has been observed which is one of the reason why TFET could replace MOSFET. The simulation has been carried out with non-local barrier tunneling model using Synopsys TCAD Tool. A Huge ION/Ioff ratio of more than1014 is obtained for 50 nm channel length DG-TFET. So Tunnel FET can be a promising candidate for low-standby low-power switching performance.
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