高质量AlGaSb/ alsb分布Bragg反射器的制备

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708176

K. Akahane, N. Yamamoto, S. Gozu, A. Ueta, M. Tsuchiya

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引用次数: 0

摘要

我们在Si(001)衬底上制备了AlGaSb/ alsb分布Bragg反射器(DBRs)。AlSb引发层的使用使我们能够在Si衬底上制造高质量的AlGaSb/AlSb薄膜。扫描电镜观察到alasb /AlSb-DBR结构清晰。用傅里叶变换红外光谱仪观察到以1500 nm为中心的100 nm止光带

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Fabrication of High Quality AlGaSb/AlSb-distributed Bragg Reflectors on Si

We fabricated AlGaSb/AlSb-distributed Bragg reflectors (DBRs) on Si(001) substrates. The use of an AlSb initiation layer enabled us to fabricate high-quality AlGaSb/AlSb films on the Si substrates. A well-defined AlGaSb/AlSb-DBR structure was observed using a scanning electron microscope. A stop band of 100 nm centered at 1500 nm was observed using a Fourier transform infrared spectrometer

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3rd IEEE International Conference on Group IV Photonics, 2006.

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