具有n+-多晶硅栅极的单层薄HfO/sub /栅极电介质

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852762

L. Kang, Y. Jeon, K. Onishi, B. Lee, W. Qi, R. Nieh, S. Gopalan, J.C. Lee

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引用次数: 32

摘要

制备了具有n+多晶硅栅极的单层HfO/sub /栅极介质mosscaps和mosfet。对多晶硅工艺进行了优化，使HfO/sub /的泄漏电流和当量氧化厚度保持在较低水平。获得了优异的C-V特性(如低Dit和频散)和可靠性特性。并证明了合理的MOSFET质量。

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Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate

MOSCAPs and MOSFETs of a single-layer thin HfO/sub 2/ gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfO/sub 2/ remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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