半导体器件和电路的退化建模

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI:10.1109/SMELEC.1998.781155

A.U. Lagies, L. Gohler, J. Sigg, P. Turkes, R. Kraus

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引用次数: 2

摘要

给出了半导体器件和电路退化的数学描述。它基于这样的假设，即退化的原因是由于能量输入引起的内部结构的破坏。通过IGBT模块的仿真对该公式进行了验证。此外，提出了一种尽可能缩短仿真时间的方法。

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Degradation modeling of semiconductor devices and electrical circuits

A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is destruction of the internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally, a method is presented to shorten the simulation time as much as possible.

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ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)

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