K. Subhani, D. Dibitonto, T. Pennington, S. Baier, J. Stronczer
{"title":"快速，抗辐射的GaAs CHIGFET运放","authors":"K. Subhani, D. Dibitonto, T. Pennington, S. Baier, J. Stronczer","doi":"10.1109/SSST.1993.522762","DOIUrl":null,"url":null,"abstract":"A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-/spl mu/m channel length. The amplifier is fully monolithically integrated with low-frequency open-loop gain of 10/sup 5/, gain-bandwidth product of 1.5 GHz, DC input offset voltage of 20 mV, slew rate of 760 V//spl mu/s, and power requirements of 30 mW. Its output voltage is linear from -3 V to +3 V within 1% accuracy. A gain of 50 k/spl Omega/ is achieved for operation as a transimpedance amplifier with risetime <5 ns, which would be suitable for a preamplifier for liquid and solid ionization detectors.","PeriodicalId":260036,"journal":{"name":"1993 (25th) Southeastern Symposium on System Theory","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fast, radiation-hard GaAs CHIGFET op amp\",\"authors\":\"K. Subhani, D. Dibitonto, T. Pennington, S. Baier, J. Stronczer\",\"doi\":\"10.1109/SSST.1993.522762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-/spl mu/m channel length. The amplifier is fully monolithically integrated with low-frequency open-loop gain of 10/sup 5/, gain-bandwidth product of 1.5 GHz, DC input offset voltage of 20 mV, slew rate of 760 V//spl mu/s, and power requirements of 30 mW. Its output voltage is linear from -3 V to +3 V within 1% accuracy. A gain of 50 k/spl Omega/ is achieved for operation as a transimpedance amplifier with risetime <5 ns, which would be suitable for a preamplifier for liquid and solid ionization detectors.\",\"PeriodicalId\":260036,\"journal\":{\"name\":\"1993 (25th) Southeastern Symposium on System Theory\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (25th) Southeastern Symposium on System Theory\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSST.1993.522762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (25th) Southeastern Symposium on System Theory","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSST.1993.522762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-/spl mu/m channel length. The amplifier is fully monolithically integrated with low-frequency open-loop gain of 10/sup 5/, gain-bandwidth product of 1.5 GHz, DC input offset voltage of 20 mV, slew rate of 760 V//spl mu/s, and power requirements of 30 mW. Its output voltage is linear from -3 V to +3 V within 1% accuracy. A gain of 50 k/spl Omega/ is achieved for operation as a transimpedance amplifier with risetime <5 ns, which would be suitable for a preamplifier for liquid and solid ionization detectors.
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