摩尔分数对单量子阱InxGa1-xN/GaN蓝光发光二极管功率谱密度的影响

2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 1900-01-01 DOI:10.1109/MICROCOM.2016.7522504

A. Prajapati, P. Dey, T. Das

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引用次数: 0

摘要

采用两种不同的半导体材料设计了单量子阱发光二极管，量子阱结构具有高辐射效率、表面复合等优点。我们设计该装置是为了在保持阳极电压不变的情况下，观察不同波长下摩尔分数对功率谱密度的影响。模拟了一种近晶格匹配的AlGaN-InGaN-GaN双异质结构半导体器件，得到了该器件在特定波长下的最大功率谱密度。当阳极电压为5V时，铟在InxGa1-xN中的摩尔分数为x= 0.24时，在波长为452 nm处的功率谱密度为9.31 W/cm-eV。摩尔分数的变化范围为x=0.01 ~ 0.30。

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The effect of mole-fraction on power spectral density of single quantum well based InxGa1-xN/GaN blue light emitting diode

A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W/cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.

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2016 International Conference on Microelectronics, Computing and Communications (MicroCom)

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