胶体量子点图像传感器的晶圆级像素化

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830334

Yunlong Li, G. Karve, P. Malinowski, J. Kim, Epimitheas Georgitzikis, V. Pejović, M. Lim, L. M. Hagelsieb, R. Puybaret, I. Lieberman, Jiwon Lee, D. Cheyns, P. Heremans, H. Osman, D. Tezcan

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引用次数: 0

摘要

研究了胶体量子点(CQD)薄膜在200毫米CMOS晶圆上的单片集成。首次在晶圆级上实现了CQD薄膜光电二极管的全像素化。我们展示了与标准CMOS晶圆厂设备兼容的低温工艺流程。自对准像素化方法是对在像素化底部电极上放置薄膜吸收层的传统方法的改进，它可以减少串扰并实现多堆栈阵列。

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Wafer Level Pixelation of Colloidal Quantum Dot Image Sensors

Monolithic integration of colloidal quantum dot (CQD) thin-film on 200 mm CMOS wafers is demonstrated. Full pixelation of CQD thin-film photodiodes at wafer level is presented for the first time. We show a low-temperature process flow compatible with standard CMOS fab equipment. The self-aligned pixelation approach is an improvement over a conventional way of having a thin-film absorber layer on pixelated bottom electrodes, and it enables crosstalk reduction as well as multi-stack arrays.

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来源期刊

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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