完全集成的单芯片锁相环，采用0.2 /spl mu/m E-/ d - hemt技术，具有15 GHz VCO

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567744

P. Leber, W. Baumberger, M. Lang, M. Rieger-Motzer, W. Bronner, A. Hulsmann, B. Raynor

{"title":"完全集成的单芯片锁相环，采用0.2 /spl mu/m E-/ d - hemt技术，具有15 GHz VCO","authors":"P. Leber, W. Baumberger, M. Lang, M. Rieger-Motzer, W. Bronner, A. Hulsmann, B. Raynor","doi":"10.1109/GAAS.1996.567744","DOIUrl":null,"url":null,"abstract":"A completely integrated single-chip phase-locked loop was designed using a 0.2 /spl mu/m-enhancement/depletion AlGaAs/GaAs/AlGaAs-HEMT technology. The chip contains a VCO with 15 GHz center frequency, as well as a frequency divider, a phase detector, and a loop filter. The fabricated chip size is 1.5/spl times/1.5 mm/sup 2/. The power consumption is 0.5 W using a supply voltage of 5.0 V. The lock range is approximately /spl plusmn/270 MHz. The phase noise is -100 dBc/Hz at 100 kHz and -107 dBc/Hz at 1 MHz offset from the carrier, respectively.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology\",\"authors\":\"P. Leber, W. Baumberger, M. Lang, M. Rieger-Motzer, W. Bronner, A. Hulsmann, B. Raynor\",\"doi\":\"10.1109/GAAS.1996.567744\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A completely integrated single-chip phase-locked loop was designed using a 0.2 /spl mu/m-enhancement/depletion AlGaAs/GaAs/AlGaAs-HEMT technology. The chip contains a VCO with 15 GHz center frequency, as well as a frequency divider, a phase detector, and a loop filter. The fabricated chip size is 1.5/spl times/1.5 mm/sup 2/. The power consumption is 0.5 W using a supply voltage of 5.0 V. The lock range is approximately /spl plusmn/270 MHz. The phase noise is -100 dBc/Hz at 100 kHz and -107 dBc/Hz at 1 MHz offset from the carrier, respectively.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567744\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用0.2 /spl mu/m增强/耗尽AlGaAs/GaAs/AlGaAs- hemt技术设计了完全集成的单片机锁相环。该芯片包含一个中心频率为15ghz的压控振荡器，以及分频器、鉴相器和环路滤波器。所制芯片尺寸为1.5/ sp1倍/1.5 mm/sup 2/。电源电压为5.0 V时，功耗为0.5 W。锁定范围约为/spl plusmn/270 MHz。相位噪声在100khz时为- 100dbc /Hz，在偏离载波1mhz时为-107 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology

A completely integrated single-chip phase-locked loop was designed using a 0.2 /spl mu/m-enhancement/depletion AlGaAs/GaAs/AlGaAs-HEMT technology. The chip contains a VCO with 15 GHz center frequency, as well as a frequency divider, a phase detector, and a loop filter. The fabricated chip size is 1.5/spl times/1.5 mm/sup 2/. The power consumption is 0.5 W using a supply voltage of 5.0 V. The lock range is approximately /spl plusmn/270 MHz. The phase noise is -100 dBc/Hz at 100 kHz and -107 dBc/Hz at 1 MHz offset from the carrier, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量