Yohei Nakamura, Michihiro Shintani, Takashi Sato, T. Hikihara
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A high power curve tracer for characterizing full operational range of SiC power transistors
A curve tracer is proposed for measuring static characteristics of power devices at high voltage and large current range. Using a SiC-MOSFET as a switch for pulse-based measurement, high voltage tolerance and fast switching are simultaneously achieved. The proposed curve tracer facilitates current-voltage measurements for full I-V regions found in practical device operations. The measurement results provided by the proposed method contribute to build device models that can be used to design efficient power converters.
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