HL-LHC耗尽CMOS传感器

H. Pernegger
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引用次数: 1

摘要

欧洲核子研究中心高亮度大型强子对撞机ATLAS跟踪探测器(ITk)的升级需要开发新型辐射硬硅传感器技术。为了开发用于ATLAS的单片CMOS传感器,我们开发了全耗尽CMOS单片有源像素传感器(DMAPS),以实现符合ATLAS ITk规格的辐射硬CMOS传感器。基于对原型传感器的初步研究,我们现在已经开发、生产和测试了第一个全尺寸耗尽CMOS传感器,采用不同的CMOS工艺,采用两种设计方法:使用“小”电极的设计采用TowerJazz 180nm成像工艺,使用“大”电极的设计采用AMS 180nm和LFoundry 150nm CMOS工艺。传感器通过高电阻率衬底和高偏置电压的组合实现探测层的完全耗尽。优化了矩阵读出架构,以应对LHC 25ns束结构和最外层ITk像素层的高命中率。本文介绍了不同的设计方法,并将提供测量结果,以评估其性能,以考虑到未来应用于跟踪器的辐射硬单片CMOS传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Depleted CMOS sensors for HL-LHC
The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. For the development of monolithic CMOS sensors for ATLAS we develop fully depleted CMOS monolithic active pixel sensors (DMAPS) to achieve radiation hard CMOS sensors inline with ATLAS ITk specifications. Based on initial studies on prototype sensors we have now developed, produced and tested first full-size depleted CMOS sensors in different CMOS processes along two design approaches: Designs using "small" electrodes were produced in the TowerJazz 180nm imaging process and designs using "large" electrodes were manufactured in AMS 180nm and LFoundry 150nm CMOS processes. The sensors achieve full depletion of the detection layer through a combination of high-resistivity substrates and high bias voltages. The matrix readout architectures are optimised to cope with the LHC 25ns bunch structure and the high hit-rates as expected for the outermost ITk pixel layer. The paper introduces the different design approaches and will present measurements results to assess their performance in view of future applications as radiation hard monolithic CMOS sensors for trackers.
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