紫外/蓝色GaP雪崩光电二极管

A. Beck, C. Collins, S. Wang, B. Yang, J. Campbell, A. Yuhus, A. Chen, J. Woodall
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引用次数: 0

摘要

磷化镓虽然最常用于发射器,但在250 nm至500 nm的紫外光,蓝光和蓝绿光检测应用中都有潜在的用途。在GaP中,较短的波长具有较高的吸收系数,因此吸收长度较短。因此,UV光谱中量子效率的提高取决于这些载流子在重组之前到达有源区域。因此,我们实现了一种凹窗结构来减少p区厚度,从而提高了短波长的量子效率。在/spl sim/440 nm处,峰值量子效率提高了38%。同样重要的是要注意在短波长的增强量子效率,特别是那些低于非嵌入式器件的光谱范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
UV/blue GaP avalanche photodiodes
Gallium phosphide, though most commonly used in emitters, has potential for use in both ultraviolet, blue, and blue green light detection applications from 250 nm to 500 nm. In GaP, shorter wavelengths have a higher absorption coefficient and consequently a shorter absorption length. Therefore, increased quantum efficiency in the UV spectrum hinges on these carriers reaching the active region prior to recombination. Thus, we implemented a recessed window structure to reduce the p-region thickness, resulting in increased quantum efficiency at shorter wavelengths. An improved peak quantum efficiency of 38% occurs at /spl sim/440 nm. It is also important to note the enhanced quantum efficiency at short wavelengths, especially those below the spectral range of the non-recessed devices.
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