Cu(in,Ga)Se2薄膜的s形光致发光发射位移

2012 Asia Communications and Photonics Conference (ACP) Pub Date : 2013-05-02 DOI:10.1364/ACPC.2012.AF4B.32

Y. Liao, S. Kuo, F. Lai, W. T. Lin, D. Hsieh, D. Chiu, H. Kuo

{"title":"Cu(in,Ga)Se2薄膜的s形光致发光发射位移","authors":"Y. Liao, S. Kuo, F. Lai, W. T. Lin, D. Hsieh, D. Chiu, H. Kuo","doi":"10.1364/ACPC.2012.AF4B.32","DOIUrl":null,"url":null,"abstract":"We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.","PeriodicalId":118096,"journal":{"name":"2012 Asia Communications and Photonics Conference (ACP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"“ S-shaped ” photoluminescence emission shift in Cu(In,Ga)Se2 thin films\",\"authors\":\"Y. Liao, S. Kuo, F. Lai, W. T. Lin, D. Hsieh, D. Chiu, H. Kuo\",\"doi\":\"10.1364/ACPC.2012.AF4B.32\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.\",\"PeriodicalId\":118096,\"journal\":{\"name\":\"2012 Asia Communications and Photonics Conference (ACP)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Asia Communications and Photonics Conference (ACP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/ACPC.2012.AF4B.32\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/ACPC.2012.AF4B.32","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们利用光致发光(PL)测量方法研究了Cu(in,Ga)Se2薄膜中的载流子复合机制，并在近带边缘跃迁的相应PL峰上观察到s型发射位移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

“ S-shaped ” photoluminescence emission shift in Cu(In,Ga)Se2 thin films

We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 Asia Communications and Photonics Conference (ACP)

自引率

0.00%

发文量