{"title":"在Iso/各向异性衬底上的槽线-微带过渡:宽带设计","authors":"A. Podcameni, M. L. Coimbra","doi":"10.1109/MWSYM.1981.1129827","DOIUrl":null,"url":null,"abstract":"The two-stub transition design is analysed on isotropic and anisotropic substrates. Broadband design is made by optimizing the slotline and the stub lengths. Sensibility analysis of the behaviour of the whole structure with these parameters shows the slotline length and impedance to be the dominant factors. An extended-octave design can easily be achieved, with VWSR less than 1.5, for double-transitions.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Slotline-Microstrip Transition on Iso/Anisotropic Substrate : Broadband Design\",\"authors\":\"A. Podcameni, M. L. Coimbra\",\"doi\":\"10.1109/MWSYM.1981.1129827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The two-stub transition design is analysed on isotropic and anisotropic substrates. Broadband design is made by optimizing the slotline and the stub lengths. Sensibility analysis of the behaviour of the whole structure with these parameters shows the slotline length and impedance to be the dominant factors. An extended-octave design can easily be achieved, with VWSR less than 1.5, for double-transitions.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Slotline-Microstrip Transition on Iso/Anisotropic Substrate : Broadband Design
The two-stub transition design is analysed on isotropic and anisotropic substrates. Broadband design is made by optimizing the slotline and the stub lengths. Sensibility analysis of the behaviour of the whole structure with these parameters shows the slotline length and impedance to be the dominant factors. An extended-octave design can easily be achieved, with VWSR less than 1.5, for double-transitions.