{"title":"利用铟镓锌氧化物基自开关二极管进行直流电流整流","authors":"A. C. Fryer, A. Flewitt, C. Ramsdale","doi":"10.1109/NANO.2013.6720808","DOIUrl":null,"url":null,"abstract":"Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC current rectification using indium-gallium zinc oxide-based selfswitching diodes\",\"authors\":\"A. C. Fryer, A. Flewitt, C. Ramsdale\",\"doi\":\"10.1109/NANO.2013.6720808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed.\",\"PeriodicalId\":189707,\"journal\":{\"name\":\"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2013.6720808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2013.6720808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC current rectification using indium-gallium zinc oxide-based selfswitching diodes
Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed.
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