{"title":"电泳沉积(EPD)基Pd/GaN肖特基二极管的氢传感性能","authors":"Wei-Cheng Chen, Huey-Ing Chen, Po-Cheng Chou, Ching-Hong Chang, Yung-Jen Chiou, Wen-Chau Liu","doi":"10.1109/ICSENST.2015.7438422","DOIUrl":null,"url":null,"abstract":"In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×10<sup>4</sup> when exposing to a 1% H<sub>2</sub>/air gas at 100°C, and also detect even as low as 50 ppm H<sub>2</sub>/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H<sub>2</sub>/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.","PeriodicalId":375376,"journal":{"name":"2015 9th International Conference on Sensing Technology (ICST)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode\",\"authors\":\"Wei-Cheng Chen, Huey-Ing Chen, Po-Cheng Chou, Ching-Hong Chang, Yung-Jen Chiou, Wen-Chau Liu\",\"doi\":\"10.1109/ICSENST.2015.7438422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×10<sup>4</sup> when exposing to a 1% H<sub>2</sub>/air gas at 100°C, and also detect even as low as 50 ppm H<sub>2</sub>/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H<sub>2</sub>/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.\",\"PeriodicalId\":375376,\"journal\":{\"name\":\"2015 9th International Conference on Sensing Technology (ICST)\",\"volume\":\"247 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 9th International Conference on Sensing Technology (ICST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENST.2015.7438422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 9th International Conference on Sensing Technology (ICST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENST.2015.7438422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode
In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.
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