一种新型MIS Al/sub 2/O/sub 3/电容技术作为gb dram的发展前景

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852761

I.S. Park, B. Lee, S. Choi, Jae Soon Im, Seung Hwan Lee, K. Park, Joo-Won Lee, Y. Hyung, Yeong-kwan Kim, H. Park, Y. Park, Sang In Lee, M. Lee

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引用次数: 3

摘要

采用ALD技术沉积Al/sub 2/O/sub 3/薄膜，实现了低热收支和优越介电特性的新型MIS-Al/sub 2/O/sub 3/电容器技术。成功研制了具有MIS-Al/sub 2/O/sub 3/电容的全集成1gbit DRAM，其1.2 V时的存储电容和漏电流分别为30 fF/cell和0.5 fA/cell。此外，产生固体“0”10秒失效位计数的Vp值为2.4 V，证实了其优异的介电特性。

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Novel MIS Al/sub 2/O/sub 3/ capacitor as a prospective technology for Gbit DRAMs

A novel MIS-Al/sub 2/O/sub 3/ capacitor technology was developed with the low thermal budget and showed the superior dielectric characteristics, which were achieved by adopting ALD technique for the Al/sub 2/O/sub 3/ film deposition. A fully integrated 1 Gbit DRAM with MIS-Al/sub 2/O/sub 3/ capacitor was successfully worked, where storage capacitance and leakage current at 1.2 V were 30 fF/cell and 0.5 fA/cell, respectively. Moreover, the excellent dielectric characteristics were confirmed from the result that Vp for generating solid "0" 10 sec fail bit counts was measured to be 2.4 V.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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