宽带隙器件的近结热管理

A. Bar-Cohen, J. Albrecht, J. Maurer
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引用次数: 50

摘要

近结热管理对于实现使用宽带隙材料的电子和光子器件的承诺至关重要。在这样的器件中,包括PAs中的GaN hemt,与“近结”区域相关的热阻在散热路径中占主导地位,并且通常与电阻链中所有其他元件的热阻一样大。作为DARPA热管理技术(TMT)投资组合的一部分,正在努力开发变革性的、改变范式的冷却技术。本文将简要回顾WBG设备的热管理需求和DARPA的热管理技术组合,重点介绍这些工作的目标和现状。然后将注意力转向近结冷却的有前途的选择,以及实现其WBG器件热管理潜力所固有的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Near-Junction Thermal Management for Wide Bandgap Devices
Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the "near-junction" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA's portfolio in Thermal Management Technologies (TMT), efforts are underway to develop transformative, paradigm-changing cooling techniques. This paper will briefly review the thermal management needs of WBG devices and DARPA's Thermal Management Technologies portfolio, with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. Attention will then turn to promising options in near-junction cooling and the challenges inherent in realizing their potential for WBG device thermal management.
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