调用mosfet的排除/提取

2005 18th International Conference on Applied Electromagnetics and Communications Pub Date : 1900-01-01 DOI:10.1109/ICECOM.2005.205048

E. Sijercic, B. Pejcinovic

{"title":"调用mosfet的排除/提取","authors":"E. Sijercic, B. Pejcinovic","doi":"10.1109/ICECOM.2005.205048","DOIUrl":null,"url":null,"abstract":"A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 mum are analyzed","PeriodicalId":102260,"journal":{"name":"2005 18th International Conference on Applied Electromagnetics and Communications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Scalling of the exclusion/extraction InSb MOSFETs\",\"authors\":\"E. Sijercic, B. Pejcinovic\",\"doi\":\"10.1109/ICECOM.2005.205048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 mum are analyzed\",\"PeriodicalId\":102260,\"journal\":{\"name\":\"2005 18th International Conference on Applied Electromagnetics and Communications\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 18th International Conference on Applied Electromagnetics and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECOM.2005.205048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 18th International Conference on Applied Electromagnetics and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECOM.2005.205048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种在标准漂移扩散模拟器中模拟InSb mosfet的方法。由于其低带隙和高迁移率，InSb有望成为在极低电压下工作的太赫兹有源器件的材料。对非抛物性、简并性、迁移性和俄歇复合/生成进行了解释和建模。测试了排除/提取型MOSFET的漏电流、跨导和最大单位电流增益频率，并分析了其低至0.15 μ m的标度特性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Scalling of the exclusion/extraction InSb MOSFETs

A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 mum are analyzed

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 18th International Conference on Applied Electromagnetics and Communications

自引率

0.00%

发文量