基于忆阻器- cmos的混合D锁存器设计与分析

Pranay Dhongade, Kunwar Singh, Shalini
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引用次数: 1

摘要

忆阻器的发现,也被称为继电阻器、电感器和电容器之后的第四个缺失元件,显示了纳米级器件的新兴增长。非易失性、小尺寸和低功耗的特性将是下一代芯片设计的显著优势。触发器是具有寄存器、计数器、分频器等应用的顺序电路。它们可以通过主从配置中的级联锁存器生成。为了设计D触发器,本文提出了一种主从级联的D锁存器设计。本文还比较了采用忆阻器- cmos混合技术和忆阻器比例逻辑(MRL)设计D锁存器的各种方法。所有仿真均在Cadence Virtuoso上进行,采用VTEAM忆阻器模型和CMOS 90nm工艺文件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Analysis of Memristor-CMOS Based Hybrid D Latch
The discovery of the memristor, also known as the fourth missing element after resistor, inductor and capacitor, has shown emerging growth in nanoscale devices. The properties of non-volatility, small size and low power will be a significant advantage in the upcoming generation of chip design. Flip-Flops are sequential circuits with applications like registers, counters, frequency dividers etc. They can be generated by cascading latch in a master-slave configuration. This paper proposes a design of a D latch cascaded in master-slave configuration for designing a D flip-flop. This paper also compares various methods for designing D latch using the memristor-CMOS hybrid technique and Memristor ratioed logic (MRL). All the simulations were performed on Cadence Virtuoso, VTEAM model for memristor and CMOS 90nm technological file were used.
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