基于实测噪声温度对电场依赖性的AlInAs/GaInAs HEMT异质结构噪声源参数的确定

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328150

C. Bergamaschi, W. Patrick, W. Baechtold

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引用次数: 5

摘要

测量了AlInAs/GaInAs HEMT异质结构中噪声温度对电场的依赖关系。结果表明，在GaAs mesfet和AlInAs/GaInAs hemt中，噪声温度对电场的依赖性明显不同。因此，必须为AlInAs/GaInAs hemt使用不同的模型。基于实测噪声温度与电场的关系，建立了AlInAs/GaInAs HEMT的解析噪声模型。计算噪声源参数，并与噪声测量中提取的噪声源参数进行比较

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Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field

The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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