2nm及以上互连研究的拐点和趋势，以解决RC瓶颈

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371903

Z. Tokei, V. Vega, G. Murdoch, M. O'Toole, K. Croes, R. Baert, M. V. Veen, C. Adelmann, J. Soulie, J. Boemmels, C. Wilson, S. Park, K. Sankaran, G. Pourtois, J. Sweerts, S. Paolillo, S. Decoster, M. Mao, F. Lazzarino, J. Versluijs, V. Blanco, M. Ercken, E. Kesters, Q. Le, F. Holsteyns, N. Heylen, L. Teugels, K. Devriendt, H. Struyf, P. Morin, N. Jourdan, S. Elshocht, I. Ciofi, A. Gupta, H. Zahedmanesh, K. Vanstreels, M. Na

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引用次数: 14

摘要

将引入互连选项，并在地方一级审查针对紧密间距金属层。例子包括混合金属化、半大马士革互连以及潜在的新导体材料。

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Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck

Interconnect options will be introduced and reviewed targeting tight pitch metal layers at the local levels. Examples include hybrid metallization, semi-damascene interconnects as well as potential new conductor materials.

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2020 IEEE International Electron Devices Meeting (IEDM)

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