{"title":"金属有机前驱体制备pbtio3薄膜","authors":"R. Vest, Jiejie Xu","doi":"10.1109/ISAF.1986.201161","DOIUrl":null,"url":null,"abstract":"Ferroelectric PbTiO(3) films 0.5- to 2.0-mum thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cmx2 cm areas.","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"PbTiO3Films from Metallo-Organic Precursors\",\"authors\":\"R. Vest, Jiejie Xu\",\"doi\":\"10.1109/ISAF.1986.201161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric PbTiO(3) films 0.5- to 2.0-mum thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cmx2 cm areas.\",\"PeriodicalId\":302681,\"journal\":{\"name\":\"Sixth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sixth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1986.201161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sixth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1986.201161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectric PbTiO(3) films 0.5- to 2.0-mum thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cmx2 cm areas.
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