Effect of temperature on current voltage characteristics of lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs

In this paper we present an analytical model of temperature dependence of an AlGaN/GaN HEMTs. The results of the theoretical study concerning the temperature dependence of electron mobility in two dimensional electron gas (2DEG) confined at the AlGaN/GaN interface is reported. The increase in temperature results in decrease in the saturation carrier velocity in HEMTs, which in turn reduces the drain current. The effect of temperature on transconductance of device has also been studied. The results are in good agreement with the existing experimental data.