Y. Lv, Shuhong Hu, Yonggang Xu, Yang Wang, Guolin Yu, N. Dai
{"title":"两种表征液相外延生长InAsSb薄膜电性能的方法","authors":"Y. Lv, Shuhong Hu, Yonggang Xu, Yang Wang, Guolin Yu, N. Dai","doi":"10.1117/12.2179766","DOIUrl":null,"url":null,"abstract":"High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy\",\"authors\":\"Y. Lv, Shuhong Hu, Yonggang Xu, Yang Wang, Guolin Yu, N. Dai\",\"doi\":\"10.1117/12.2179766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.\",\"PeriodicalId\":225534,\"journal\":{\"name\":\"Photoelectronic Technology Committee Conferences\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photoelectronic Technology Committee Conferences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2179766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photoelectronic Technology Committee Conferences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2179766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy
High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.
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