标准电池发生器的先进技术映射

Vinícius P. Correia, A. Reis
{"title":"标准电池发生器的先进技术映射","authors":"Vinícius P. Correia, A. Reis","doi":"10.1145/1016568.1016636","DOIUrl":null,"url":null,"abstract":"In this paper, a new algorithm for technology mapping aiming at standard-cell generators is proposed. The proposed method has features that explore several AND/OR circuit decompositions by using an n-ary tree representation of the circuit. In the covering step, the cell that leads to the smaller depth increase is chosen. Depth calculation is not limited to the subject tree and takes into account all previously mapped trees representing sub-expressions used as inputs. Experimental results show gains in circuit depth measured by the number of gates in series, as well as in area measured by transistor count when compared to SIS mapping approach using the same libraries. The gain in circuit depth translates to better timing as verified by SPICE simulations.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Advanced technology mapping for standard-cell generators\",\"authors\":\"Vinícius P. Correia, A. Reis\",\"doi\":\"10.1145/1016568.1016636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new algorithm for technology mapping aiming at standard-cell generators is proposed. The proposed method has features that explore several AND/OR circuit decompositions by using an n-ary tree representation of the circuit. In the covering step, the cell that leads to the smaller depth increase is chosen. Depth calculation is not limited to the subject tree and takes into account all previously mapped trees representing sub-expressions used as inputs. Experimental results show gains in circuit depth measured by the number of gates in series, as well as in area measured by transistor count when compared to SIS mapping approach using the same libraries. The gain in circuit depth translates to better timing as verified by SPICE simulations.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29

摘要

本文提出了一种新的针对标准单元发生器的技术映射算法。所提出的方法具有通过使用电路的n元树表示来探索多个AND/OR电路分解的特征。在覆盖步骤中,选择导致深度增加较小的单元。深度计算不仅限于主题树,还考虑到所有先前映射的树,表示用作输入的子表达式。实验结果表明,与使用相同库的SIS映射方法相比,通过串联门数测量的电路深度以及通过晶体管计数测量的面积有所增加。电路深度的增益转化为更好的时序,SPICE仿真验证了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced technology mapping for standard-cell generators
In this paper, a new algorithm for technology mapping aiming at standard-cell generators is proposed. The proposed method has features that explore several AND/OR circuit decompositions by using an n-ary tree representation of the circuit. In the covering step, the cell that leads to the smaller depth increase is chosen. Depth calculation is not limited to the subject tree and takes into account all previously mapped trees representing sub-expressions used as inputs. Experimental results show gains in circuit depth measured by the number of gates in series, as well as in area measured by transistor count when compared to SIS mapping approach using the same libraries. The gain in circuit depth translates to better timing as verified by SPICE simulations.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信