La2O3/InGaAs MOS接口对InGaAs MOSFET性能的影响及其在InGaAs负电容FET中的应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838404

C. Chang, K. Endo, K. Kato, C. Yokoyama, M. Takenaka, S. Takagi

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引用次数: 14

摘要

系统地研究了La2O3/InGaAs MOS接口对InGaAs mosfet性能的影响及其物理根源。结果表明，与Al2O3/ InGaAs mosfet相比，La2O3/ InGaAs mosfet具有更低的s - s和更低的载流子捕获性能，同时由于较高的固定氧化物电荷密度，其迁移率较低。实验还首次发现，热收支低于300℃的ALD La2O3薄膜在W/La2O3/InGaAs MOS和W/La2O3/W MIM结构中具有铁电性。在W/La2O3(15nm)/InGaAs mosfet中首次证明了负电容(NC)效应引起的陡坡特性。

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Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET

The impact of La2O3/InGaAs MOS interfaces on the performance of InGaAs MOSFETs and the physical origins are systematically investigated. It is found that La2O3/ InGaAs MOSFETs exhibit lower S. S. and lower carrier trapping properties, while have lower mobility than Al2O3/ InGaAs MOSFETs because of higher fixed oxide charge density. Also, it is experimentally found for the first time that ALD La2O3 films with thermal budget lower than 300°C have ferroelectricity in W/La2O3/InGaAs MOS and W/La2O3/W MIM structures. The steep slope characteristics due to the negative capacitance (NC) effect have been demonstrated for the first time in W/La2O3(15nm)/InGaAs MOSFETs.

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2016 IEEE International Electron Devices Meeting (IEDM)

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