基于梯度GaPAs-GaInAs的二极管作为毫米波高功率源

2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek) Pub Date : 2021-09-13 DOI:10.1109/KhPIWeek53812.2021.9569964

I. Storozhenko

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引用次数: 0

摘要

利用蒙特卡罗模拟数据对1 μm长度的梯度间隙GaInPAs合金Gunn二极管的振荡功率谱进行了标定。本文给出了基于梯度隙$\mathbf{GaPAs}-\mathbf{Ga_{0.5}} \mathbf{In_{0.5}} \mathbf{A s}$合金的二极管在不同梯度隙层长度、不同GaP分数和不同活性区电子密度下的振荡研究结果。在最大射频功率下，找到了梯度隙半导体的三种最优长度和相应的最优GaP分数。其中一个优化的二极管在110.4 GHz的基频下提供9 mW的射频功率，在331 GHz的三谐波下提供27 μW的射频功率。对不同的二极管进行比较

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Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

The power spectrums of oscillations of 1 μm-length Gunn diodes based on gradual graded-gap GaInPAs alloy are assessed by means of hydrodynamic simulations calibrated against Monte Carlo simulation data. In the paper is presented the results of the investigation of oscillations in the diode based on graded-gap $\mathbf{GaPAs}-\mathbf{Ga_{0.5}} \mathbf{In_{0.5}} \mathbf{A s}$ alloy at different graded-gap layer length, different GaP fraction and different electron density in active zone. Three optimal lengths of a graded-gap semiconductor and the corresponding optimal fractions of GaP in GaPAs for maximum RF power are found. One of the optimized diodes provides 9 mW RF power at 110.4 GHz for the fundamental and 27 μW (331 GHz) for the third harmonic. Different diodes are compared

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2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)

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