Haojuan Dai, Yan Lu, M. Law, Sai-Weng Sin, U. Seng-Pan, R. Martins
{"title":"射频能量收集用片上整流器的综述与设计","authors":"Haojuan Dai, Yan Lu, M. Law, Sai-Weng Sin, U. Seng-Pan, R. Martins","doi":"10.1109/IEEE-IWS.2015.7164642","DOIUrl":null,"url":null,"abstract":"This paper presents an overview of the CMOS on-chip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kΩ to 1MΩ. The simulated results show that the cross-connected (CC) topology exhibits the highest achievable power conversion efficiency up to 65% (rectifier only), while the CC topology with the threshold voltage cancellation technique and the MOS diode topology achieve 46.7% and 51%, respectively.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"A review and design of the on-chip rectifiers for RF energy harvesting\",\"authors\":\"Haojuan Dai, Yan Lu, M. Law, Sai-Weng Sin, U. Seng-Pan, R. Martins\",\"doi\":\"10.1109/IEEE-IWS.2015.7164642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an overview of the CMOS on-chip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kΩ to 1MΩ. The simulated results show that the cross-connected (CC) topology exhibits the highest achievable power conversion efficiency up to 65% (rectifier only), while the CC topology with the threshold voltage cancellation technique and the MOS diode topology achieve 46.7% and 51%, respectively.\",\"PeriodicalId\":164534,\"journal\":{\"name\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"volume\":\"176 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2015.7164642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A review and design of the on-chip rectifiers for RF energy harvesting
This paper presents an overview of the CMOS on-chip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kΩ to 1MΩ. The simulated results show that the cross-connected (CC) topology exhibits the highest achievable power conversion efficiency up to 65% (rectifier only), while the CC topology with the threshold voltage cancellation technique and the MOS diode topology achieve 46.7% and 51%, respectively.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
