{"title":"金属有机化学气相沉积制备长波量子阱激光二极管","authors":"A. Kasukawa, H. Okamoto","doi":"10.1109/ICIPRM.1990.203007","DOIUrl":null,"url":null,"abstract":"Long-wavelength GaInAs(P)/InP quantum well laser diodes (QW LDs) are described with respect to the epitaxial growth technique used, their QW structure, and the cavity design. QW LDs with graded-index separate-confinement heterostructure (GRIN-SCH), grown by metalorganic chemical vapor deposition (MOCVD), exhibit low threshold current density (410 A/cm/sup 2/), low threshold current (6 mA), high characteristic temperature (153 K), and high output power (100 mW). Preliminary aging tests have been carried out at 50 degrees C, 5 mW and at 70 degrees C, 5 mW. N appreciable change in driving current was seen after 7000 h, indicating the high reliability of these devices.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Long wavelength quantum well laser diodes grown by metalorganic chemical vapor deposition\",\"authors\":\"A. Kasukawa, H. Okamoto\",\"doi\":\"10.1109/ICIPRM.1990.203007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Long-wavelength GaInAs(P)/InP quantum well laser diodes (QW LDs) are described with respect to the epitaxial growth technique used, their QW structure, and the cavity design. QW LDs with graded-index separate-confinement heterostructure (GRIN-SCH), grown by metalorganic chemical vapor deposition (MOCVD), exhibit low threshold current density (410 A/cm/sup 2/), low threshold current (6 mA), high characteristic temperature (153 K), and high output power (100 mW). Preliminary aging tests have been carried out at 50 degrees C, 5 mW and at 70 degrees C, 5 mW. N appreciable change in driving current was seen after 7000 h, indicating the high reliability of these devices.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Long wavelength quantum well laser diodes grown by metalorganic chemical vapor deposition
Long-wavelength GaInAs(P)/InP quantum well laser diodes (QW LDs) are described with respect to the epitaxial growth technique used, their QW structure, and the cavity design. QW LDs with graded-index separate-confinement heterostructure (GRIN-SCH), grown by metalorganic chemical vapor deposition (MOCVD), exhibit low threshold current density (410 A/cm/sup 2/), low threshold current (6 mA), high characteristic temperature (153 K), and high output power (100 mW). Preliminary aging tests have been carried out at 50 degrees C, 5 mW and at 70 degrees C, 5 mW. N appreciable change in driving current was seen after 7000 h, indicating the high reliability of these devices.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
