用类比法构建开关HEMT的可伸缩低信号模型

D. A. Luzhaitsev, A. O. Turov, Yuri A. Miller, D. S. Hohol, Elina O. Luzhaitseva
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引用次数: 0

摘要

本文基于可扩展的低信号开关pHEMT模型的实现,即类比的方法进行了描述。给出了实际晶体管和修正比例模型的比较特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using the Method of Analogies in the Construction of a Scalable Low-Signal Model of a Switching HEMT
The article is based on the implementation of a scalable low-signal switch pHEMT model, namely, the method of analogies is described. Comparative characteristics of real transistors and models of modified scale are given.
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