弹性应变驱动砷化铟(001)砷化镓外延生长方式的改变

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335644

A. Lyamkina, D. Dmitriev, S. P. Moshchenko, Y. G. Galitsyn, A. Toropov

{"title":"弹性应变驱动砷化铟(001)砷化镓外延生长方式的改变","authors":"A. Lyamkina, D. Dmitriev, S. P. Moshchenko, Y. G. Galitsyn, A. Toropov","doi":"10.1109/INTERNANO.2009.5335644","DOIUrl":null,"url":null,"abstract":"In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 µm and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide\",\"authors\":\"A. Lyamkina, D. Dmitriev, S. P. Moshchenko, Y. G. Galitsyn, A. Toropov\",\"doi\":\"10.1109/INTERNANO.2009.5335644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 µm and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.\",\"PeriodicalId\":376370,\"journal\":{\"name\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTERNANO.2009.5335644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTERNANO.2009.5335644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了铟剂量对微滴外延制备量子点光学特性的影响。光致发光测量表明，随着峰数的增加，红移到1.3µm，点光谱形式发生了相当大的变化。高斯分解分析揭示了不同量子点群对应的特征峰宽。一个宽度接近Stranski-Krastanov生长模式值，在我们的类比样品上测量。这表明，由于一定量的铟，液滴发生了向SK生长模式的转变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide

In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 µm and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

自引率

0.00%

发文量