采用具有AlAs/InAs超晶格层的InP异质结fet的高性能60 ghz共面MMIC LNA

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.860876

A. Fujihara, E. Mizuki, H. Miyamoto, Y. Makino, K. Yamanoguchi, N. Samoto

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引用次数: 16

摘要

我们描述了一个60 ghz共面MMIC低噪声放大器(LNA)，使用0.1 /spl μ /m门长InP异质结fet (hjfet)。通过精确缩放栅极电阻的小信号模型，确定了一级FET的最佳栅极宽度为80 /spl mu/m。晶圆上噪声测量显示，在60 GHz时噪声系数为2.2 dB，增益为22.8 dB。

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High performance 60-GHz coplanar MMIC LNA using InP heterojunction FETs with AlAs/InAs superlattice layer

We describe a 60-GHz coplanar MMIC low-noise amplifier (LNA) using 0.1 /spl mu/m-gate-length InP heterojunction FETs (HJFETs). An optimum gate width of 80 /spl mu/m was determined for the first stage FET by using a small signal model including accurate scaling of the gate resistance. On-wafer noise measurements demonstrated a noise figure of 2.2 dB and a gain of 22.8 dB at 60 GHz.

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来源期刊

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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