集成准垂直dmosfet的无阻尼电感开关

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509485

R. Constapel, M. S. Shekar, R.K. Williams

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引用次数: 14

摘要

本研究通过测量和数值器件模拟探讨了60 V准垂直n沟道dmosfet的非箝位电感开关(UIS)性能和失效机制。分析了UIS过程中DMOS内部产生的非均匀电流分布，并研究了局部自热的影响。

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Undamped inductive switching of integrated quasi-vertical DMOSFETs

This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 60 V quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise inside the DMOS during UIS are analyzed and the effects of local self-heating are investigated.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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