P. Weerakoon, K. Klemic, F. Sigworth, E. Culurciello
{"title":"集成膜片箝位放大器的电噪声分析","authors":"P. Weerakoon, K. Klemic, F. Sigworth, E. Culurciello","doi":"10.1109/BIOCAS.2007.4463302","DOIUrl":null,"url":null,"abstract":"This paper presents an evaluation of electrical noise sources and signal-to-noise limitations in a fabricated integrated patch-clamp amplifier. We also present numerical calculation of the theoretical noise of the patch-clamp system. Our fabricated device was measured to have less than 4pA of rms noise at 10 kHz bandwidth, similar in performance to commercial bench- top systems. The integrated patch-clamp can accurately measure nano-Amperes of current and is intended for a high-throughput system that can screen a large number of cells in parallel. The fabricated device consumes 1480 by 1300 mum of silicon area and 3.2 mW at 3.3 V of power. The device was fabricated using AMI 0.5 mA Micron technology.","PeriodicalId":273819,"journal":{"name":"2007 IEEE Biomedical Circuits and Systems Conference","volume":"279 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical Noise Analysis of an Integrated Patch-Clamp Amplifier\",\"authors\":\"P. Weerakoon, K. Klemic, F. Sigworth, E. Culurciello\",\"doi\":\"10.1109/BIOCAS.2007.4463302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an evaluation of electrical noise sources and signal-to-noise limitations in a fabricated integrated patch-clamp amplifier. We also present numerical calculation of the theoretical noise of the patch-clamp system. Our fabricated device was measured to have less than 4pA of rms noise at 10 kHz bandwidth, similar in performance to commercial bench- top systems. The integrated patch-clamp can accurately measure nano-Amperes of current and is intended for a high-throughput system that can screen a large number of cells in parallel. The fabricated device consumes 1480 by 1300 mum of silicon area and 3.2 mW at 3.3 V of power. The device was fabricated using AMI 0.5 mA Micron technology.\",\"PeriodicalId\":273819,\"journal\":{\"name\":\"2007 IEEE Biomedical Circuits and Systems Conference\",\"volume\":\"279 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Biomedical Circuits and Systems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIOCAS.2007.4463302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Biomedical Circuits and Systems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIOCAS.2007.4463302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Noise Analysis of an Integrated Patch-Clamp Amplifier
This paper presents an evaluation of electrical noise sources and signal-to-noise limitations in a fabricated integrated patch-clamp amplifier. We also present numerical calculation of the theoretical noise of the patch-clamp system. Our fabricated device was measured to have less than 4pA of rms noise at 10 kHz bandwidth, similar in performance to commercial bench- top systems. The integrated patch-clamp can accurately measure nano-Amperes of current and is intended for a high-throughput system that can screen a large number of cells in parallel. The fabricated device consumes 1480 by 1300 mum of silicon area and 3.2 mW at 3.3 V of power. The device was fabricated using AMI 0.5 mA Micron technology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
